| PART |
Description |
Maker |
| HMC636ST89 HMC636ST89E |
GaAs PHEMT HIGH LINEARITY Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
|
| CGY1049 |
1 GHz, 29 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
| CGY1047 |
1 GHz, 27 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
| CGY1032 |
1 GHz, 32 dB gain GaAs push-pull amplifier 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
| HMC313 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| 313E |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
美国讯泰微波有限公司上海代表
|
| AS179-000 |
GaAs SPDT Switch 300 kHz-3 GHz Medium Power
PHEMT GaAs IC High Linearity 3 V T/R SPDT Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|
| AS193-000 |
AS193-000:PHEMT GaAs IC High Linearity 3 V Control|DC-6 GHz Plastic Packaged and Chip|SPST
PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions
|
| HMMC-3022 |
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路定标
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路2定标
|
Agilent(Hewlett-Packard)
|
| HMMC-3024 |
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-4 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路定标
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-4 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路4定标
|
Agilent(Hewlett-Packard)
|
